Excimer laser annealing of silicon nanowires
Excimer laser annealing of silicon nanowires
复制标题
DOI：
10.1063/1.2713774
复制
发表时间：
2007-03
影响因子：
4
通讯作者：
N. Misra;Li Xu;Y. Pan;N. Cheung;C. Grigoropoulos
中科院分区：
文献类型：
--
作者：
N. Misra;Li Xu;Y. Pan;N. Cheung;C. Grigoropoulos
纳米线可以与低成本的柔性塑料衬底一起用于大面积显示器和传感器阵列等应用。然而，与塑料基板不相容的高温处理步骤，如热退火，仍然是一个主要的障碍。激光退火允许局部能量输入而不影响底层衬底，可以帮助克服这个问题。在这项研究中，准分子激光退火的硅纳米线被证明是一种有效的手段，激活植入的掺杂。讨论了纳米线的光吸收特性，并研究了能量密度和脉冲数等参数对纳米线光吸收特性的影响。
Nanowires can potentially be used with low-cost flexible plastic substrates for applications such as large-area displays and sensor arrays. However, high temperature processing steps such as thermal annealing that are incompatible with plastic substrates are still a major hindrance. Laser annealing permits localized energy input without affecting the underlying substrate and can help overcome this problem. In this study, the excimer laser annealing of silicon nanowires is demonstrated to be an efficient means of activating implanted dopants. The optical absorption of the nanowires is discussed and the effect of parameters such as fluence and number of pulses is investigated.