First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density
First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density
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DOI：
10.35848/1882-0786/abec90
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发表时间：
2021-03
影响因子：
2.3
通讯作者：
S. Ozaki;J. Yaita;A. Yamada;Y. Kumazaki;Y. Minoura;T. Ohki;N. Okamoto;N. Nakamura;J. Kotani
中科院分区：
文献类型：
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作者：
S. Ozaki;J. Yaita;A. Yamada;Y. Kumazaki;Y. Minoura;T. Ohki;N. Okamoto;N. Nakamura;J. Kotani
In this letter, we successfully achieved high-power radio frequency (RF) operation of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on free-standing AlN substrate at X-band. The developed HEMT on AlN substrate comprised a 200 nm thick GaN channel and AlGaN buffer with an Al composition of 30%. Thanks to high breakdown voltage of the HEMT on AlN substrate, we successfully demonstrated 15.2 W mm−1 output power density at operating voltages of 70 V even without device technologies such as source-field plate and optimization of device dimension. Our results show that the potential of GaN HEMTs on AlN substrate as next-generation high-power RF devices.
