Sub-10 nm patterning using EUV interference lithography
Sub-10 nm patterning using EUV interference lithography
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DOI：
10.1088/0957-4484/22/37/375302
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发表时间：
2011-09-16
期刊：
影响因子：
3.5
通讯作者：
Ekinci, Yasin
中科院分区：
文献类型：
--
作者：
Paeivaenranta, Birgit;Langner, Andreas;Ekinci, Yasin
极紫外（EUV）光刻目前被认为是用于低于20 nm特征尺寸的大批量制造的领先技术。与此同时，基于干涉透射光栅的极紫外干涉光刻已成为工业和学术研究的有力工具。在本文中，我们展示了纳米图案与子10纳米分辨率使用这种技术。高效和优化的钼光栅可实现低至8 nm半节距的线/空间图案解析，并显示低至6 nm半节距的调制。这些结果显示了在亚10 nm范围内的光学纳米图案化的性能，并且目前标志着基于光子的光刻的记录。此外，一个有效的相位掩模完全抑制零级衍射，并提供50 nm的线/空间图案在大面积进行评估。这种有效的相位掩模为台式EUV干涉光刻系统铺平了道路。
Extreme ultraviolet (EUV) lithography is currently considered as the leading technology for high-volume manufacturing below sub-20 nm feature sizes. In parallel, EUV interference lithography based on interference transmission gratings has emerged as a powerful tool for industrial and academic research. In this paper, we demonstrate nanopatterning with sub-10 nm resolution using this technique. Highly efficient and optimized molybdenum gratings result in resolved line/space patterns down to 8 nm half-pitch and show modulation down to 6 nm half-pitch. These results show the performance of optical nanopatterning in the sub-10 nm range and currently mark the record for photon-based lithography. Moreover, an efficient phase mask completely suppressing the zeroth-order diffraction and providing 50 nm line/space patterns over large areas is evaluated. Such efficient phase masks pave the way towards table-top EUV interference lithography systems.