Ferromagnetic phase transition in topological crystalline insulator thin films: Interplay of anomalous Hall angle and magnetic anisotropy
Ferromagnetic phase transition in topological crystalline insulator thin films: Interplay of anomalous Hall angle and magnetic anisotropy
复制标题
DOI：
10.1103/physrevb.100.134422
复制
发表时间：
2019-10-17
影响因子：
3.7
通讯作者：
Bonanni, A.
中科院分区：
文献类型：
--
作者：
Adhikari, R.;Volobuev, V. V.;Bonanni, A.
在物质的磁拓扑相中，量子反常霍尔（QAH）效应是由铁磁掺杂、磁邻近效应和应变工程驱动的一种涌现现象。对于铁磁有序的拓扑晶体绝缘体（TCI）的SnTe类，可以预见到QAH态的实现，其具有由Chern数C >= 1定义的多个无耗散边缘和表面导电沟道。根据Sn_（1-x）Mn_xTe（0.00
In magnetic topological phases of matter, the quantum anomalous Hall (QAH) effect is an emergent phenomenon driven by ferromagnetic doping, magnetic proximity effects, and strain engineering. The realization of QAH states with multiple dissipationless edge and surface conduction channels defined by a Chern number C >= 1 was foreseen for the ferromagnetically ordered SnTe class of topological crystalline insulators (TCIs). From magnetotransport measurements on Sn1-xMnxTe (0.00