Implementation of silicon-on-glass MEMS devices with embedded through-wafer silicon vias using the glass reflow process for wafer-level packaging and 3D chip integration
Implementation of silicon-on-glass MEMS devices with embedded through-wafer silicon vias using the glass reflow process for wafer-level packaging and 3D chip integration
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DOI：
10.1088/0960-1317/18/2/025018
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发表时间：
2008-02-01
影响因子：
2.3
通讯作者：
Fang, Weileun
中科院分区：
文献类型：
--
作者：
Lin, Chiung-Wen;Hsu, Chia-Pao;Fang, Weileun
本研究提出了一种新的系统架构，以实现硅玻璃（SOG）MEMS器件上的硅玻璃复合基板与嵌入式硅通孔。因此，MEMS器件的3D集成可以通过晶片硅通孔来实现。连接到器件焊盘的硅通孔嵌入Pyrex玻璃内部。减小了通孔和微结构的寄生电容，并且减小了热膨胀系数（CTE）的失配。在应用中，玻璃回流工艺与SOG微机械加工工艺一起被用来实现所提出的概念。通过硅通孔的谐振器的成功驱动证明。通过阳极键合Pyrex 7740晶片，可以进一步实现晶片级密封封装。通过氦气泄漏测试，封装器件的气密性满足MIL-STD-883 E。封装的SOG器件与SMT（表面贴装技术）兼容，可用于3D微系统集成。
This study presents a novel system architecture to implement silicon-on-glass (SOG) MEMS devices on Si-glass compound substrate with embedded silicon vias. Thus, the 3D integration of MEMS devices can be accomplished by means of through-wafer silicon vias. The silicon vias connecting to the pads of devices are embedded inside the Pyrex glass. Parasitic capacitance for both vias and microstructures is decreased and mismatch of coefficient of thermal expansion (CTE) is reduced. In applications, the glass reflow process together with the SOG micromachining processes were employed to implement the presented concept. Successful driving of the resonator through the silicon vias is demonstrated. The wafer-level hermetic packaging can be further achieved by anodic bonding of a Pyrex7740 wafer. Hermeticity of the packaged device performed by helium leak test satisfied MIL-STD-883E. The packaged SOG device is SMT ( surface mount technology) compatible and ready for 3D microsystem integration.