High frequency signal response of impedance matched UHF carrier type head
High frequency signal response of impedance matched UHF carrier type head
复制标题
阻抗匹配的 UHF 载波型磁头的高频信号响应
DOI：
10.1109/20.617950
复制
发表时间：
1997
影响因子：
2.1
通讯作者：
Y. Koshimoto
中科院分区：
文献类型：
--
作者：
M. Senda;Y. Koshimoto
我们研究了UHF载波型薄膜磁头对高频信号场的响应，该磁头在UHF下采用磁导率变化。使用具有多层膜芯的芯/引线/芯头元件和阻抗匹配技术使得可以获得大输出、高灵敏度和宽带宽。对于50 /spl Ω/匹配磁头中的5 MHz信号场，我们实现了4 mV//spl mu/m/spl middot/Oe的灵敏度和/spl sim/10/sup-6/ Oe的场分辨率。为了检查带宽，我们建议使用微带线的泄漏场作为各种频率的恒定信号场。通过实验和计算，估计出3dB带宽大于100 MHz。
We examined the response to a high frequency signal field of a UHF carrier type thin-film head, which employs a permeability change at UHF. The use of a core/lead/core head element with a multilayer film core and the impedance matching technique made it possible to obtain a large output, a high sensitivity, and a broad bandwidth. We achieved a sensitivity of 4 mV//spl mu/m/spl middot/Oe and a field resolution of /spl sim/10/sup -6/ Oe for a 5 MHz-signal field in the 50 /spl Omega/-matched head. In order to examine bandwidth, we proposed using a leak field from a microstripline as a constant signal field for various frequencies. A 3 dB bandwidth of >100 MHz was estimated from experiment and calculation.