Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon.
Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon.
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DOI：
10.1364/ol.42.004889
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发表时间：
2017-10
期刊：
影响因子：
3.6
通讯作者：
O. Chefonov;A. Ovchinnikov;S. Romashevskiy;X. Chai;T. Ozaki;A. Savel’ev;M. Agranat;V. Fortov
中科院分区：
文献类型：
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作者：
O. Chefonov;A. Ovchinnikov;S. Romashevskiy;X. Chai;T. Ozaki;A. Savel’ev;M. Agranat;V. Fortov
给出了在n型掺杂硅（载流子浓度为8.7×1016 cm-3）上进行的高场太赫兹传输实验结果。我们使用电场强度高达3.1 MV cm-1和脉冲持续时间为700 fs的太赫兹脉冲。在1.5-3.1 MV cm-1范围内，随着太赫兹电场强度的增加，薄膜的透过率增加了1.90倍。
The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of 8.7×1016 cm-3) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm-1 and a pulse duration of 700 fs. A huge transmittance enhancement of ∼90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5-3.1 MV cm-1.