A high accuracy resonant pressure sensor by fusion bonding and trench etching
A high accuracy resonant pressure sensor by fusion bonding and trench etching
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DOI:
10.1016/s0924-4247(99)00065-5
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发表时间:
1999-08-30
影响因子:
4.6
通讯作者:
Bertioli, MM
中科院分区:
文献类型:
--
作者:
Welham, CJ;Greenwood, J;Bertioli, MM
A pressure sensor based upon an electrostatically driven and piezoresistively sensed 'double-shuttle' lateral resonator is presented. The resonator has been designed using simple beam theory and the mode shapes investigated using finite element analysis. The sensor is fabricated using fusion bonding, wafer thinning and trench etching. Measurements of preliminary devices yield a fundamental frequency of approximate to 50 kHz and Q-factor of 1000 in air at atmospheric pressure, rising to over 50,000 in high vacuum (< 0.01 mbar). The relative pressure sensitivity of the sensor is measured to be 3.8% bar(-1) for a 120 mu m thick diaphragm over a pressure range of 10 bar, and 15% bar(-1) for a 25 mu m thick diaphragm over a pressure range of 3 bar. (C) 1999 Elsevier Science S.A. All rights reserved.