Quantum kinetic theory of two-beam current injection in bulk semiconductors
Quantum kinetic theory of two-beam current injection in bulk semiconductors
复制标题
体半导体中双束电流注入的量子动力学理论
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
J. Sipe
中科院分区：
文献类型：
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作者：
P. Král;J. Sipe
本文发展了用频率为2v0，v0的两束激光同时激发体半导体的电流注入理论。由此产生的单光子和双光子跃迁的相干混合在动量空间中的6k个点处产生具有不同强度的有效场Aeff（k）。产生感应电流的载流子产生中的这种不对称性由两个场的相对相位控制。由非平衡绿色函数导出了光生载流子的量子动力学方程。他们在这里被简化到玻尔兹曼极限，并适用于GaAs的LO声子的存在下的模型。不同形式的传导电子分布导致了轻空穴和重空穴带的产生，并给出了不同的感应电流饱和和弛豫速率。对电流产生太赫兹辐射进行了讨论。
We develop a theory of current injection in bulk semiconductors by simultaneous excitation with two laser beams with frequencies 2v0 , v0. Coherent mixing of the resulting oneand two-photon transitions generates an effective field Ae f f(k) with different strengths at 6k points in momentum space. This asymmetry in carrier generation, producing the induced current, is controlled by the relative phase of the two fields. Quantum kinetic equations for the photogenerated carriers are derived from nonequilibrium Green functions. They are simplified here to the Boltzmann limit, and applied to a model of GaAs in the presence of LO phonons. Different forms of the conduction electron distributions result for generation from lightand heavy-hole bands, and give different saturation and relaxation rates for the induced current. Generation of THz radiation by the current is also discussed.