Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy
Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy
复制标题
分子束外延生长 GaAs 上的变质 InP/InGaAs 双异质结双极晶体管
DOI：
10.1063/1.1306657
复制
发表时间：
2000
影响因子：
4
通讯作者：
G. Ng
中科院分区：
文献类型：
--
作者：
H. Q. Zheng;K. Radhakrishnan;Hong Wang;K. Yuan;S. Yoon;G. Ng
采用固体源分子束外延技术在GaAs衬底上变质生长了InP/InGaAs双异质结双极晶体管（HBT）结构。线性渐变的InxGa 1-xP（x从0.48到1变化）缓冲层用于适应应变弛豫。缓冲层和HBT结构的结晶度通过X射线衍射法检查。发射极面积为5×5 μm2的器件的典型峰值电流增益为40，共发射极击穿电压（BVCEO）高于9 V，电流增益截止频率（fT）为46 GHz，最大振荡频率（fmax）为40 GHz。
InP/InGaAs double-heterojunction bipolar transistor (HBT) structures were grown metamorphically on GaAs substrates by solid-source molecular-beam epitaxy. A linearly graded InxGa1−xP (x varying from 0.48 to 1) buffer layer was used to accommodate the strain relaxation. The crystallinity of the buffer layer and the HBT structure was examined by x-ray diffractometry. Devices with 5×5 μm2 emitter area showed a typical peak current gain of 40, a common-emitter breakdown voltage (BVCEO) higher than 9 V, a current gain cut-off frequency (fT) of 46 GHz, and a maximum oscillation frequency (fmax) of 40 GHz.