Analytical model for a tunnel field-effect transistor
Analytical model for a tunnel field-effect transistor
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隧道场效应晶体管的分析模型
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
W. Magnus
中科院分区：
文献类型：
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作者：
W. Vandenberghe;A. Verhulst;G. Groeseneken;B. Sorée;W. Magnus
隧道场效应晶体管 (TFET) 是纳米尺寸 MOSFET 后续产品的有希望的候选者。由于TFET缺乏简单的分析模型，其工作原理一般不太清楚。本文介绍了一种新的 TFET 结构，并使用 Kanepsilas 模型推导了通过 TFET 的电流的解析表达式。此外，还导出了 TFET 电流的紧凑表达式，并得出了有关 TFET 设计的结论。将获得的解析表达式与 2D 器件模拟器的结果进行比较，并证明在低栅极电压下具有良好的一致性。
The tunnel field-effect transistor (TFET) is a promising candidate for the succession of the MOSFET at nanometer dimensions. Due to the absence of a simple analytical model for the TFET, the working principle is generally not well understood. In this paper a new TFET structure is introduced and using Kanepsilas model, an analytical expression for the current through the TFET is derived. Furthermore, a compact expression for the TFET current is derived and conclusions concerning TFET design are drawn. The obtained analytical expressions are compared with results from a 2D device simulator and good agreement at low gate voltages is demonstrated.