Silicon wafer etching by pulsed high-power inductively coupled Ar/CF4 plasma with 150 kHz band frequency
Silicon wafer etching by pulsed high-power inductively coupled Ar/CF4 plasma with 150 kHz band frequency
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DOI：
10.35848/1347-4065/ab75b7
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发表时间：
2020-05-01
影响因子：
1.5
通讯作者：
Nakano, Shizuka
中科院分区：
文献类型：
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作者：
Saito, Yuma;Shibata, Kodai;Nakano, Shizuka
研究了突发脉冲高功率电感耦合等离子体（ICP）对硅片的刻蚀。采用157 kHz电源的200 μ s宽的脉冲串来产生具有50 Hz重复率的ICP。与突发电源同步的矩形脉冲电压施加在晶片上，最高可达1 kV。将氩气（Ar）和四氟甲烷（CF 4）的混合气体供应到真空室中。等离子体密度和电子温度分别为10（19）m（-3）和2.8eV。在Ar等离子体的情况下，硅蚀刻速率为0.01 μ m·min（-1），具有1000 V的负偏压。通过在Ar中加入CF_4，刻蚀速率增加到0.23 μ m·min ~（-1），并随偏压的增加而线性增加。在-300 ~-1000 V范围内，靶电流和Ar+、F-* 的发射强度与偏压有关。CF 4含量从0%增加到10%，刻蚀速率急剧增加，当CF 4含量为10%时，刻蚀速率几乎不变。F* 的发射强度对CF 4含量的依赖性类似于蚀刻速率的依赖性。(C)2020日本应用科学学会
A silicon wafer etching using a burst pulse high-power inductively coupled plasma (ICP) is investigated. A 200 mu s wide burst of a 157 kHz power supply is employed to generate ICP with a repetition rate of 50 Hz. A rectangular pulsed voltage synchronized with the burst power supply is applied upto 1 kV at the wafer. Mixed gas of argon (Ar) and tetrafluoromethane (CF4) is supplied into the vacuum chamber. The plasma density and electron temperature are 10(19) m(-3) and 2.8 eV where the wafer is, respectively. In the case of Ar plasma, the silicon etching rate is 0.01 mu m min(-1) with 1000 V negative bias. The etching rate increases to 0.23 mu m min(-1) by adding CF4 into Ar and increases linearly with increasing the bias voltage. The target current and emission intensity of Ar+ and F-* are depended on bias voltage from -300 to -1000 V. The etching rate sharply increases by increasing CF4 content from 0% to 10%, and it becomes almost constant at 10%. The dependency of emission intensity of F* on CF4 content is similar to the dependency the etching rate. (C) 2020 The Japan Society of Applied