DFB semiconductor lasers based on reconstruction-equivalent-chirp technology
DFB semiconductor lasers based on reconstruction-equivalent-chirp technology
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DOI：
10.1364/oe.15.002348
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发表时间：
2007-03-05
期刊：
影响因子：
3.8
通讯作者：
Chen, Xiangfei
中科院分区：
文献类型：
--
作者：
Dai, Yitang;Chen, Xiangfei
提出了一种具有等效相移和啁啾的分布反馈半导体激光器，并对其进行了数值研究。作为一个例子，它表明，在相移激光器中所需的λ/4相移可以等效地获得由一个专门设计的采样结构，而不是一个实际的相移，而外部特性不变。这种新颖的DFB结构的优点在于，它可以通过标准的全息技术来制造。因此，所提出的方案有望为制造具有复杂结构的高性能DFB半导体激光器提供一种低成本的方法。(c)2007年，美国光学学会。
A distributed feedback (DFB) semiconductor laser with equivalent phase shifts and chirps is proposed for the first time to our knowledge and is investigated numerically. As an example, it is shown that the desired lambda/4 phase shift in a phase-shifted laser can be obtained equivalently by a specially designed sampling structure instead of an actual phase shift, while the external characteristics are unchanged. This novel DFB structure is advantageous in that it can be fabricated by standard holographic technology. Hence, the proposed scheme is expected to provide a low-cost method for fabricating a high-performance DFB semiconductor laser with complex structures. (c) 2007 Optical Society of America.