Transient photoconductivity and photo-induced optical absorption in amorphous semiconductors
Transient photoconductivity and photo-induced optical absorption in amorphous semiconductors
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DOI：
10.1080/13642818208246421
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发表时间：
1982-07
期刊：
影响因子：
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通讯作者：
J. Orenstein;M. Kastner;V. Vaninov
中科院分区：
文献类型：
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作者：
J. Orenstein;M. Kastner;V. Vaninov
摘要非晶半导体和绝缘体表现出色散输运现象：脉冲激发后，载流子的平均迁移率随时间降低。一个简单的模型解释了如何在一个连续分布的局域态多重陷阱（MT）引起的色散。然后，这个模型被用来显示什么可以学到的材料从一个完整的研究其色散传输时，MT是已知的分散的起源。瞬态光诱导光吸收（PA）提供了一个直接的测试的MT机制的存在。瞬态光电流（PC），然后提供了光谱的局域化状态时，在重组开始之前的时间制度进行检查。使用这种状态密度，可以确定表征单分子（MR）和双分子（BR）的传输和复合的许多参数。从局域态到高能输运态的热激发的假设限制了热化和共振。
Abstract Amorphous semiconductors and insulators display the phenomenon of dispersive transport: the average mobility of the carriers decreases with time after pulsed excitation. A simple model explains how multiple trapping (MT) in a continuous distribution of localized states gives rise to dispersion. This model is then used to show what can be learned about the material from a complete study of its dispersive transport when MT is known to be the origin of the dispersion. Transient photo-induced optical absorption (PA) provides a direct test of the presence of the MT mechanism. Transient photocurrent (PC) then provides the spectrum of the localized states when examined in the time regime before recombination begins. Using this density of states, many of the parameters that characterize transport and recombination, both monomolecular (MR) and bimolecular (BR), can be determined. The assumption that thermal excitation from localized states to higher-energy transport states limits both thermalization and r...