Direct observation of the depairing current density in single-crystalline Ba0.5K0.5Fe2As2 microbridge with nanoscale thickness
Direct observation of the depairing current density in single-crystalline Ba0.5K0.5Fe2As2 microbridge with nanoscale thickness
复制标题
纳米级厚度单晶Ba0.5K0.5Fe2As2微桥中断电电流密度的直接观察
DOI：
10.1063/1.4818127
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发表时间：
2013-08-05
影响因子：
4
通讯作者：
Moshchalkov, Victor V.
中科院分区：
文献类型：
--
作者：
Li, Jun;Yuan, Jie;Moshchalkov, Victor V.
研究了厚度为276 ~ 18 nm的Ba0.5K0.5Fe2As2单晶微桥的临界电流密度（Jc）。厚度为91 nm的微桥在35 K时的Jc为10.8 MA/cm2，采用双间隙s波金兹堡-朗道模型将Jc(T)外推至T = 0 K, Jc(T)达到944.4 MA/cm2，符合相应的电流极限。Jc（T，H,θ）的温度依赖性、磁场依赖性和角依赖性较弱，各向异性因子分别为1.15 （1 T）和1.26 (5 T)，表明各向异性金兹堡-朗道标度的有效性。
We investigated the critical current density (Jc) of Ba0.5K0.5Fe2As2 single-crystalline microbridges with thicknesses ranging from 276 to 18 nm. The Jc of the microbridge with thickness down to 91 nm is 10.8 MA/cm2 at 35 K, and reaches 944.4 MA/cm2 by extrapolating Jc(T) to T = 0 K using a two-gap s-wave Ginzburg-Landau model, well in accordance with the depairing current limit. The temperature, magnetic field, and angular-dependence of Jc(T,H,θ) indicated weaker field dependence and weakly anisotropic factor of 1.15 (1 T) and 1.26 (5 T), which also yielded the validity of the anisotropic Ginzburg-Landau scaling.