High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy
High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy
复制标题
通过等离子体辅助分子束外延在块状 GaN 衬底上生长的高功率蓝紫 InGaN 激光二极管
DOI：
10.1088/0268-1242/20/8/030
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发表时间：
2005
影响因子：
1.9
通讯作者：
S. Porowski
中科院分区：
文献类型：
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作者：
C. Skierbiszewski;P. Perlin;I. Grzegory;Z. Wasilewski;M. Siekacz;A. Feduniewicz;P. Wisniewski;J. Borysiuk;P. Prystawko;G. Kamler;T. Suski;S. Porowski
报道了用射频等离子体辅助分子束外延（PAMBE）制备的InGaN多量子阱激光二极管（ld）。在297 K到360 K的温度范围内，以0.25%占空比的50 ns脉冲电流注入激光操作。在297 K下，阈值电流密度和电压分别为9 kA cm−2 （680 mA）和8.2 V。坡度效率为0.35 ~ 0.47 W A−1。在3.6 A、8.7 V脉冲工作时，可获得1.1 W的高输出功率。我们比较了两个和五个InGaN/InGaN量子阱的激光二极管的参数。新的低温生长机制增强了表面吸附动力学，加上块状氮化镓低位错密度衬底，使我们能够生长出高质量的激光二极管结构。我们的研究结果表明，PAMBE在氮基光电器件的生长中没有内在的限制。
We report on the InGaN multi-quantum well laser diodes (LDs) made by RF plasma-assisted molecular beam epitaxy (PAMBE). The laser operation was demonstrated in a temperature range from 297 K up to 360 K with pulsed current injections using 50 ns pulses at 0.25% duty cycle. The threshold current density and voltage for these LDs were 9 kA cm−2 (680 mA) and 8.2 V respectively at 297 K. The slope efficiency is 0.35–0.47 W A−1. A high output power of 1.1 W was obtained during pulse operation for 3.6 A and 8.7 V. We compare parameters of laser diodes with two and five InGaN/InGaN quantum wells. The new, low temperature growth mechanism which enhances surface adatom kinetics, together with bulk GaN low dislocation density substrates allowed us to grow high quality laser diode structures. Our result indicates that there are no intrinsic limitations in the growth of nitride-based optoelectronic devices by PAMBE.