Nanolasers grown on silicon
Nanolasers grown on silicon
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DOI：
10.1038/nphoton.2010.315
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发表时间：
2011-03-01
期刊：
影响因子：
35
通讯作者：
Chang-Hasnain, Connie
中科院分区：
文献类型：
--
作者：
Chen, Roger;Tran, Thai-Truong D.;Chang-Hasnain, Connie
随着微处理器的速度越来越快，光互连与硅基电子器件的集成可以解决芯片级数据传输面临的日益增长的限制。然而，到目前为止，材料晶格失配和不相容的生长温度从根本上限制了激光器在硅衬底上的单片集成。在这里，我们使用一种新的生长方案来克服这一障碍，并直接生长片上InGaAs纳米柱激光器，展示了自下而上的纳米光电集成的潜力。独特的螺旋传播腔模式被用来强烈限制在亚波长纳米柱内的光，尽管InGaAs和硅之间的低折射率对比。因此，这些模式为设计芯片上纳米光子器件（如激光器）提供了一条途径。纳米柱激光器在硅上生长，提供微小的足迹和可扩展性，因此特别适合高密度光电子学。它们可能最终形成未来单片光源的基础，以弥合光子和电子电路之间的现有差距。
The integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, until now, material lattice mismatch and incompatible growth temperatures have fundamentally limited monolithic integration of lasers onto silicon substrates. Here, we use a novel growth scheme to overcome this roadblock and directly grow on-chip InGaAs nanopillar lasers, demonstrating the potency of bottom-up nano-optoelectronic integration. Unique helically propagating cavity modes are used to strongly confine light within subwavelength nanopillars despite the low refractive index contrast between InGaAs and silicon. These modes therefore provide an avenue for engineering on-chip nanophotonic devices such as lasers. Nanopillar lasers are as-grown on silicon, offer tiny footprints and scalability, and are thus particularly suited to high-density optoelectronics. They may ultimately form the basis of future monolithic light sources needed to bridge the existing gap between photonic and electronic circuits.