Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy
Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy
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DOI：
10.1063/1.1935038
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发表时间：
2005-05-23
影响因子：
4
通讯作者：
Fukui, T
中科院分区：
文献类型：
--
作者：
Noborisaka, J;Motohisa, J;Fukui, T
本文报道了在GaAs（111）B衬底上用选择性区域金属有机物气相外延（MOVPE）生长法制备{110}垂直面包围的GaAs六角纳米线。用于SA生长的衬底部分地覆盖有薄SiO2，并且限定直径d（0）为50-200 nm的圆形掩模开口。SA-MOVPE后，在没有任何催化剂的情况下，在衬底上垂直地形成了典型直径d为50 ~ 200 nm，高度为2 ~ 9 μ m的GaAs纳米线。纳米线的尺寸取决于生长条件和掩模衬底的开口尺寸。还讨论了可能的生长机制。© 2005美国物理学会。
We report on the fabrication of GaAs hexagonal nanowires surrounded by {110} vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d(0) of 50-200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9 μ m were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discussed. © 2005 American Institute of Physics.