InGaAs Nanoflowers Grown by MOCVD

InGaAs Nanoflowers Grown by MOCVD
复制标题

DOI：
10.4028/www.scientific.net/amr.560-561.747
复制
发表时间：
2012-08
期刊：
Advanced Materials Research
影响因子：
--
通讯作者：
Tiemin Zhang;G. Miao;Jun Fu;D. Ban;Z. Shen;Hong Lin;X. Zou;H. Peng
Tiemin Zhang;G. Miao;Jun Fu;D. Ban;Z. Shen;Hong Lin;X. Zou;H. Peng
中科院分区：
其他
文献类型：
--
作者：
Tiemin Zhang;G. Miao;Jun Fu;D. Ban;Z. Shen;Hong Lin;X. Zou;H. Peng

文献摘要

相似文献

以TMIn、TMGa和AsH3为反应前驱体，在420℃下，采用MOCVD法在InP衬底上制备了InGaAs纳米花。通过扫描电镜观察，我们发现InGaAs纳米花由叶片和棒状结构组成。花型由生长温度控制。随着生长温度的升高和降低，InGaAs的纳米花逐渐消失。InGaAs纳米花为In0.98Ga0.02As。
InGaAs nanoflowers have been prepared on InP substrates by MOCVD, using TMIn, TMGa and AsH3 as reactive precursors at 420 oC. Through observation by scanning electron microscopy, we find that InGaAs nanoflowers are composed with blades and rods. The flower patterns are controlled by the growth temperature. The nanoflowers of InGaAs are disappeared, when we alter the growth temperature up and down. The InGaAs nanoflowers are In0.98Ga0.02As.