Perfect one-dimensional interface states in a twisted stack of three-dimensional topological insulators
Perfect one-dimensional interface states in a twisted stack of three-dimensional topological insulators
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DOI：
10.1103/physrevresearch.4.043209
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发表时间：
2022-06
影响因子：
4.2
通讯作者：
Manato Fujimoto;T. Kawakami;M. Koshino
中科院分区：
文献类型：
--
作者：
Manato Fujimoto;T. Kawakami;M. Koshino
从理论上研究了三维拓扑绝缘子扭曲堆中界面态的电子结构。当表面Dirac锥的中心位于BZ边界一侧的中点时，我们发现，即使莫尔图本身是各向同性的，表面态的界面杂化也会形成一个几乎独立的一维通道阵列。两个反向传播的通道具有相反的自旋极化，并且它们对自旋无关的杂质的散射具有很强的抵抗力。平行通道之间的耦合可以通过扭转角来调节，唯一的一维态可以理解为有效朗道能级，其中扭转角就像一个虚拟的磁场。
We theoretically study the electronic structure of interface states in twisted stacks of three-dimensional topological insulators. When the center of the surface Dirac cone is located at a midpoint of a side of BZ boundary, we find that an array of nearly-independent one-dimensional channels is formed by the interface hybridization of the surface states, even when the moir\'{e} pattern itself is isotropic. The two counter-propagating channels have opposite spin polarization, and they are robust against scattering by spin-independent impurities. The coupling between the parallel channels can be tuned by the twist angle.The unique 1D states can be understood as effective Landau levels where the twist angle works as a fictitious magnetic field.