Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells
Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells
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DOI：
10.1063/1.2956404
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发表时间：
2008-07-14
影响因子：
4
通讯作者：
Mukai, T.
中科院分区：
文献类型：
--
作者：
Funato, M.;Hayashi, K.;Mukai, T.
我们证明了使用微结构多面量子威尔斯作为有源层的InGaN基发光二极管的表观发射颜色可以在很宽的光谱范围内进行外部控制，该光谱范围包括绿色到蓝色或白色，色温为4000 K到蓝色沿着普朗克轨迹。可控性依赖于面依赖多色发射。具有适当占空比的脉冲电流操作改变了它们的相对强度和随之而来的表观颜色，而不会严重影响发射光子的总数，特别是对于蓝色到绿色的变化。(C)2008年美国物理学会。
We demonstrate that the apparent emission colors of InGaN-based light-emitting diodes using microstructured multifacet quantum wells as active layers can externally be controlled over a wide spectral range that encompasses green to blue or white at a color temperature of 4000 K to blue along the Planckian locus. The controllability relies on facet-dependent polychromatic emissions. The pulsed current operation with the appropriate duties varied their relative intensities and the consequent apparent colors without seriously affecting the total number of emitted photons, particularly for the blue to green variation. (C) 2008 American Institute of Physics.