van der Waals epitaxial ZnTe thin film on single-crystalline graphene
van der Waals epitaxial ZnTe thin film on single-crystalline graphene
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DOI：
10.1063/1.5011941
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发表时间：
2018-01
影响因子：
3.2
通讯作者：
Xin Sun;Zhizhong Chen;Yiping Wang;Zonghuan Lu;Jian Shi;Morris Washington;T. Lu
中科院分区：
文献类型：
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作者：
Xin Sun;Zhizhong Chen;Yiping Wang;Zonghuan Lu;Jian Shi;Morris Washington;T. Lu
长期以来，石墨烯模板一直被认为是支持范德华柔性电子产品的有前途的主体。然而，由于石墨烯表面的钝性，传统半导体在转移的石墨烯表面上以平面薄膜的形式进行范德华外延生长是具有挑战性的，因为在石墨烯上薄膜物种的成核率非常低。在这项工作中，我们展示了在非晶玻璃衬底支撑的单晶石墨烯上外延闪锌矿ZnTe薄膜。考虑到玻璃衬底的无定形性质和没有明显的远程外延效应，本研究清楚地证明了3D半导体薄膜在石墨烯上的范德华外延。X射线极图分析表明，在石墨烯上存在两个ZnTe外延取向磁区，从ǁ石墨烯[10]取向区观察到较强的X射线强度，而从ǁ石墨烯[11]取向区观察到较弱的X射线强度。此外，本研究还系统地介绍了……
Graphene template has long been promoted as a promising host to support van der Waals flexible electronics. However, van der Waals epitaxial growth of conventional semiconductors in planar thin film form on transferred graphene sheets is challenging because the nucleation rate of film species on graphene is significantly low due to the passive surface of graphene. In this work, we demonstrate the epitaxy of zinc-blende ZnTe thin film on single-crystalline graphene supported by an amorphous glass substrate. Given the amorphous nature and no obvious remote epitaxy effect of the glass substrate, this study clearly proves the van der Waals epitaxy of a 3D semiconductor thin film on graphene. X-ray pole figure analysis reveals the existence of two ZnTe epitaxial orientational domains on graphene, a strong X-ray intensity observed from the ZnTe [ 1 ¯ 1 ¯2] ǁ graphene [10] orientation domain, and a weaker intensity from the ZnTe [ 1 ¯ 1 ¯2] ǁ graphene [11] orientation domain. Furthermore, this study systematical...