Signatures of quantum criticality in pure Cr at high pressure
Signatures of quantum criticality in pure Cr at high pressure
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DOI：
10.1073/pnas.1005036107
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发表时间：
2010-08-03
影响因子：
11.1
通讯作者：
Rosenbaum, T. F.
中科院分区：
文献类型：
--
作者：
Jaramillo, R.;Feng, Yejun;Rosenbaum, T. F.
元素反铁磁体Cr在高压下呈现出一种新型的裸量子临界点，这种临界点没有无序场和破缺场。在这里，我们测量磁输运的细节在临界压力，P-C类似于10 GPa，在金刚石压砧细胞，并揭示在相变的量子临界波动的作用。当磁性消失且T -> 0时，磁输运标度收敛到非平均场形式，这说明了磁性费米表面的重建，并且与在压力下在化学无序的Cr：V中测量的临界标度不同。巡游反铁磁性的崩溃只有在干净的极限下才能清楚地看到，建立无序作为量子相变的相关变量。
The elemental antiferromagnet Cr at high pressure presents a new type of naked quantum critical point that is free of disorder and symmetry-breaking fields. Here we measure magnetotransport in fine detail around the critical pressure, P-c similar to 10 GPa, in a diamond anvil cell and reveal the role of quantum critical fluctuations at the phase transition. As the magnetism disappears and T -> 0, the magntotransport scaling converges to a non-mean-field form that illustrates the reconstruction of the magnetic Fermi surface, and is distinct from the critical scaling measured in chemically disordered Cr:V under pressure. The breakdown of itinerant antiferromagnetism only comes clearly into view in the clean limit, establishing disorder as a relevant variable at a quantum phase transition.