Interplay between chemical state, electric properties, and ferromagnetism in Fe-doped ZnO films
Interplay between chemical state, electric properties, and ferromagnetism in Fe-doped ZnO films
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DOI：
10.1063/1.4794882
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发表时间：
2013-03
影响因子：
3.2
通讯作者：
G. Chen;Jingjing Peng;C. Song;F. Zeng;F. Pan
中科院分区：
文献类型：
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作者：
G. Chen;Jingjing Peng;C. Song;F. Zeng;F. Pan
Fe离子的价态对Fe掺杂的氧化锌薄膜的物理性质有重要影响。在这里，一系列具有不同Fe浓度(x=0、2.3、5.4、7.1和9.3at.%)来研究它们的结构、压电、铁电、双极电阻开关特性以及室温下对铁磁性的电控制。结构表征表明，随着Fe掺杂浓度的增加，Fe离子取代Zn2+位的化学状态由Fe3+转变为Fe2+。我们发现，由于Fe3+的离子尺寸比Zn2+小，Fe3+含量较高的薄膜具有更好的压电性和铁电性，而Fe2+掺杂量越大，薄膜的铁电和压电性越差。所有的铂/锌−xFexO/铂器件都表现出双极电阻开关特性。特别是Fe掺杂浓度较低的器件，由于掺杂浓度较低，器件具有更好的耐久性能。
Valence state of Fe ions plays an important role in the physical properties of Fe doped ZnO films. Here, a series of Zn1−xFexO films with different Fe concentrations (x = 0, 2.3, 5.4, 7.1, and 9.3 at. %) were prepared to investigate their structural, piezoelectric, ferroelectric, bipolar resistive switching properties, and electrical-control of ferromagnetism at room temperature. The structure characterizations indicate that the chemical state of Fe ions substituting Zn2+ site changes from Fe3+ to Fe2+ with the increase of Fe dopant concentration. We found enhanced piezoelectric and ferroelectric properties in Zn0.977Fe0.023O films with more Fe3+ due to the smaller Fe3+ ionic size in comparison with Zn2+ while the increase of Fe2+ concentration by a larger amount of Fe dopant results in the worse ferroelectric and piezoelectric performance. All Pt/Zn1−xFexO/Pt devices show bipolar resistive switching properties. Especially, devices with lower Fe dopant concentration exhibit better endurance properties due...