Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells
Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells
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DOI：
10.1016/j.solmat.2010.05.012
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发表时间：
2011
影响因子：
6.9
通讯作者：
B. Swain;H. Takato;Zhengxin Liu;I. Sakata
中科院分区：
文献类型：
--
作者：
B. Swain;H. Takato;Zhengxin Liu;I. Sakata
表面钝化是评价光伏材料少子寿命和制备高效太阳能电池的关键步骤。采用HF和HCl的稀酸进行锗（Ge）表面钝化。用微波光电导衰减（μ-PCD）方法测量了钝化锗片的有效寿命。H和Cl封端的Ge表面的表面复合速度S分别为23和37 cm/s。钝化的Ge表面对暴露于空气中的稳定性也进行了检查。HCl钝化的Ge表面被发现是更强大的HF钝化的表面。
Surface passivation has been recognized as a crucial step in the evaluation of minority carrier lifetime of photovoltaic materials as well as in the fabrication of high efficient solar cells. Dilute acids of HF and HCl are employed for germanium (Ge) surface passivation. An effective lifetime of passivated Ge wafers has been evaluated by a microwave photoconductive decay (μ-PCD) measurement. Surface recombination velocities, S, of H- and Cl-terminated Ge surfaces are 23 and 37cm/s, respectively. The stability of passivated Ge surfaces against exposure to air has also been examined. The HCl-passivated Ge surfaces are found to be more robust than HF-passivated surfaces.