Derivation of a behavioral RF power amplifier model with low normalized mean-square error
Derivation of a behavioral RF power amplifier model with low normalized mean-square error
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DOI：
10.1109/emicc.2007.4412755
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发表时间：
2007-12
期刊：
影响因子：
--
通讯作者：
D. Wisell;M. Isaksson
中科院分区：
文献类型：
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作者：
D. Wisell;M. Isaksson
本文提出了一种行为功率放大器模型，其归一化均方误差远低于众所周知且广泛使用的并行 Hammerstein 或抽头延迟线模型。这很重要，因为并行 Hammerstein 模型目前必须被视为行为功率放大器建模工作的基线。所提出的模型的总误差至少与作者已知的用于测量 AB 类 LDMOS 功率放大器的任何其他模型一样低。此外，所提出的模型表现出与并行 Hammerstein 模型相同或更低的带外误差。可以使用简单的系统识别技术来提取模型的参数。总之，这使得所提出的模型成为取代并行 Hammerstein 模型的有力候选者，成为许多应用的行为功率放大器建模的首选模型。
In this paper a behavioral power amplifier model with substantially lower normalized mean-square error than the well-known and widely used parallel Hammerstein or tapped delay line model is presented. This is significant since the parallel Hammerstein model currently must be considered to be the baseline for behavioral power amplifier modeling efforts. The proposed model does also have at least as low total error as any other model known to the authors for measurements on class-AB LDMOS power amplifiers. Further, the proposed model exhibits an equal or lower out-of-band error than the parallel Hammerstein model The parameters of the model can be extracted using straightforward system identification techniques. Together this makes the proposed model a strong candidate to replace the parallel Hammerstein model as the model of choice for behavioral power amplifier modeling for many applications.