Imaging of integer quantum Hall edge state in a quantum point contact via scanning gate microscopy
Imaging of integer quantum Hall edge state in a quantum point contact via scanning gate microscopy
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DOI：
10.1103/physrevb.72.155327
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发表时间：
2005-10
影响因子：
3.7
通讯作者：
N. Aoki;Carlo Requião da Cunha;R. Akis;D. Ferry;Y. Ochiai
中科院分区：
文献类型：
--
作者：
N. Aoki;Carlo Requião da Cunha;R. Akis;D. Ferry;Y. Ochiai
利用低温扫描栅显微镜（SGM）对高磁场下InGaAs异质结构中量子点接触的缩窄区进行了整数量子霍尔边缘态成像。当侧门挤压收缩时，SGM图像中的特征变得更宽更深。此外，观察到明显的高原对应于边缘状态的种群减少。我们提出了一个基于尖端引起的局部约束势变化的图像模型。
Integer quantum Hall edge states have been imaged in the constriction region of a quantum point contact fabricated in an InGaAs heterostructure at high magnetic fields using low-temperature scanning gate microscopy (SGM). Features in the SGM images grew wider and deeper as side gates squeezed the constriction. Furthermore, clear plateaus corresponding to the depopulation of edge states were observed. We propose a model for these images based on the variation of the local confinement potential induced by the tip.