Superconducting FeSe membrane synthesized by etching of water-soluble Sr3Al2O6 layer

Superconducting FeSe membrane synthesized by etching of water-soluble Sr3Al2O6 layer
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DOI:
10.1063/5.0135702
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发表时间:
2023-01
影响因子:
4
通讯作者:
J. Shiogai;A. Tsukazaki
J. Shiogai;A. Tsukazaki
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
J. Shiogai;A. Tsukazaki

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使用赝钙钛矿Sr 3Al 2 O 6牺牲层的外延剥离技术的发展释放了独立膜中出现的潜在物理性质,该独立膜主要由晶格匹配的钙钛矿型复合氧化物组成。在这里,我们报告的超导电性在一个独立的单晶FeSe膜制备使用SrTiO 3盖帽的水溶性Sr 3Al 2 O 6牺牲层,作为一个非原位生长模板。通过刻蚀牺牲层合成了FeSe薄膜,并将其转移到SiO2/Si衬底上。X射线衍射图和扫描透射电子显微镜显示,FeSe膜是完全放松,其结构性能的最小退化在剥离过程中。具有零电阻低于4.2 K的超导电性表现在独立的FeSe膜,而它是没有观察到在一个压缩的薄膜形式的面内拉伸应变。此外,FeSe膜的临界磁场和临界电流密度与大块单晶的临界磁场和临界电流密度相当。我们的超导FeSe膜的演示确保了高效用的外延剥离技术生长在SrTiO 3上的各种薄膜材料。这项研究铺平了道路的功能性应用程序,使用非原位薄膜生长和剥离技术,从各种材料的库存扩大选择。
The development of the epitaxial lift-off technique using a pseudoperovskite Sr3Al2O6 sacrificial layer has unleashed latent physical properties emerging in freestanding membranes, mainly composed of lattice-matched perovskite-type complex oxides. Here, we report the superconductivity in a freestanding single-crystalline FeSe membrane prepared using a SrTiO3 capped water-soluble Sr3Al2O6 sacrificial layer, which serves as an ex situ growth template. The FeSe membrane is synthesized by etching the sacrificial layer and transferred on a SiO2/Si substrate. X-ray diffraction pattern and scanning transmission electron microscopy reveal that the FeSe membrane is fully relaxed with minimum degradation of its structural properties during the lift-off process. A superconductivity with zero resistance below 4.2 K is exhibited in the freestanding FeSe membrane, while it is not observed in a compressed thin-film form by an in-plane tensile strain. In addition, critical magnetic field and critical current density of the FeSe membrane are comparable to those of the bulk single crystal. Our demonstration of the superconducting FeSe membrane ensures a high utility of the epitaxial lift-off technique for various thin-film materials grown on SrTiO3. This study paves the way for functional applications using ex situ thin-film growth and lift-off technique with an expanded selection from an inventory of various materials.