Adaptive semiconductor/electrocatalyst junctions in water-splitting photoanodes
Adaptive semiconductor/electrocatalyst junctions in water-splitting photoanodes
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DOI:
10.1038/nmat3811
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发表时间:
2014-01-01
期刊:
影响因子:
41.2
通讯作者:
Boettcher, Shannon W.
中科院分区:
文献类型:
--
作者:
Lin, Fuding;Boettcher, Shannon W.
High-efficiency photoelectrochemical water-splitting devices require the integration of electrocatalysts (ECs) with light-absorbing semiconductors (SCs), but the energetics and charge-transfer processes at SC / EC interfaces are poorly understood. We fabricate model EC-coated single-crystal TiO2 electrodes and directly probe SC / EC interfaces in situ using two working electrodes to independently monitor and control the potential and current at both the SC and the EC. We discover that redox-active ion-permeable ECs such as Ni(OH)(2) or NiOOH yield 'adaptive' SC / EC junctions where the effective Schottky barrier height changes in situ with the oxidation level of the EC. In contrast, dense, ion-impermeable IrOx ECs yield constant-barrier-height 'buried' junctions. Conversion of dense, thermally deposited NiOx on TiO2 into ion-permeable Ni(OH) 2 or NiOOH correlated with increased apparent photovoltage and fill factor. These results provide new insight into the dynamic behaviour of SC / EC interfaces to guide the design of efficient SC/EC devices. They also illustrate a new class of adaptive semiconductor junctions.