Electronic properties of unstrained unrelaxed narrow gap InAsxSb1−x alloys
Electronic properties of unstrained unrelaxed narrow gap InAsxSb1−x alloys
复制标题
无应变、无松弛窄带隙 InAsxSb1−x 合金的电子特性
DOI：
--
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
S. Svensson
中科院分区：
文献类型：
--
作者：
S. Suchalkin;J. Ludwig;G. Belenky;B. Laikhtman;G. Kipshidze;YouXi Lin;L. Shterengas;D. Smirnov;S. Luryi;W. Sarney;S. Svensson
已使用红外磁谱、磁输运和红外光致发光在多种合金成分中确定了无应变、无松弛 InAsxSb1−x 合金的电子特性。所有研究的合金都具有 n 型背景掺杂，电子浓度随着 Sb 含量的增加而降低。背景掺杂浓度的成分依赖性在多种成分中遵循经验指数定律。带隙和电子有效质量对合金成分的依赖性均表现出负弓形，在 x = 0.63 处达到最低值：Eg = 0.10 eV，m* = 0.0082 m0 在 4.2 K。针对电子有效质量获得的 0.038 m0 的弓形系数为与凯恩模型得到的结果非常吻合。
The electronic properties of unstrained unrelaxed InAsxSb1−x alloys have been determined in a wide range of alloy compositions using IR magnetospectroscopy, magnetotransport and IR photoluminescence. All studied alloys have n-type background doping with electron concentration decreasing with the Sb content. The composition dependence of the background doping concentration follows an empirical exponential law in a wide range of compositions. Both bandgap and electron effective mass dependence on alloy composition exhibit negative bowing reaching lowest values at x = 0.63: Eg = 0.10 eV, m* = 0.0082 m0 at 4.2 K. The bowing coefficient of 0.038 m0 obtained for the electron effective mass is in good agreement with that obtained from the Kane model.