Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation
Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation
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DOI：
10.1063/1.4976828
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发表时间：
2017-02-01
期刊：
影响因子：
6.1
通讯作者：
Calarco, Raffaella
中科院分区：
文献类型：
--
作者：
Cecchi, Stefano;Zallo, Eugenio;Calarco, Raffaella
由Sb_2Te_3/GeTe相变材料制成的超晶格在存储器应用中表现出相对于GeSbTe合金的优异性能。最近，外延Sb 2 Te 3/GeTe超晶格被发现具有GexSb 2 Te 3 +x块作为构成层之间的混合的结果。本文介绍了Sb_2Te_3/GexSb_2Te_3 +x货车derWaals超晶格的外延和表征。X射线衍射，拉曼光谱，扫描透射电子显微镜，和横向电输运数据的报告。两个子层的固有2D性质被发现，以减轻结构中的混合，显着提高界面的清晰度，并最终的超晶格结构和电性能。(C)2017年作者。
Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Herewe present the epitaxy and characterization of Sb2Te3/GexSb2Te3+x van derWaals superlattices, where GexSb2Te3+x was intentionally fabricated. X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and lateral electrical transport data are reported. The intrinsic 2D nature of both sublayers is found to mitigate the intermixing in the structures, significantly improving the interface sharpness and ultimately the superlattice structural and electrical properties. (C) 2017 Author(s).