MAGNETOTRANSPORT PROPERTIES OF P-TYPE (IN,MN)AS DILUTED MAGNETIC III-V SEMICONDUCTORS
MAGNETOTRANSPORT PROPERTIES OF P-TYPE (IN,MN)AS DILUTED MAGNETIC III-V SEMICONDUCTORS
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DOI：
10.1103/physrevlett.68.2664
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发表时间：
1992-04-27
影响因子：
8.6
通讯作者：
CHANG, LL
中科院分区：
文献类型：
--
作者：
OHNO, H;MUNEKATA, H;CHANG, LL
研究了一种基于III - V族半导体的新型稀磁半导体——p型（In，Mn）As的磁输运性质。空穴与Mn的3d自旋之间的相互作用体现在反常霍尔效应和7.5 K以下部分铁磁序的形成上。反常霍尔效应在从低温（0.4 K）到近室温的范围内主导着霍尔电阻率，而部分铁磁序的形成是一种与载流子局域化相关的协同现象。低温下剩磁和未饱和自旋的共存以及大的负磁阻可以通过大束缚磁极化子的形成来解释。
Magnetotransport properties of p-type (In,Mn)As, a new diluted magnetic semiconductor based on a III-V semiconductor, are studied. The interaction between the holes and the Mn 3d spins is manifested in the anomalous Hall effect, which dominates the Hall resistivity from low temperature (0.4 K) to nearly room temperature, and in the formation of partial ferromagnetic order below 7.5 K, which is a cooperative phenomenon related to carrier localization. The coexistence of remanent magnetization and unsaturated spins as well as the large negative magnetoresistance at low temperatures is explained by the formation of large bound magnetic polarons.