High on/off ratio field effect transistors based on exfoliated crystalline SnS2 nano-membranes
High on/off ratio field effect transistors based on exfoliated crystalline SnS2 nano-membranes
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DOI：
10.1088/0957-4484/24/2/025202
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发表时间：
2013-01-18
期刊：
影响因子：
3.5
通讯作者：
Peng, Haibing
中科院分区：
文献类型：
--
作者：
De, Debtanu;Manongdo, John;Peng, Haibing
本文报道了基于层状二维半导体SnS_2剥离纳米膜的场效应晶体管的实现，其通断比超过2×10(6)，载流子迁移率接近1 cm(2)V~(-1)S(~(-1))。结果表明，SnS2是一种具有有限带隙的层状半导体，具有巨大的潜力，可以作为未来纳米电子应用的基础，补充具有零或小带隙的石墨烯材料。
We report the implementation of field effect transistors based on exfoliated nano-membranes of a layered two-dimensional semiconductor SnS2, which exhibit an on/off ratio exceeding 2 x 10(6) and a carrier mobility of similar to 1 cm(2) V-1 s(-1). The results demonstrate the great potential of SnS2, a layered semiconductor with finite band gap, as the building block for future nanoelectronic applications complementary to graphene-based materials with zero or small band gaps.