Improving the CoolMS/spl trade/ body-diode switching performance with integrated Schottky contacts
Improving the CoolMS/spl trade/ body-diode switching performance with integrated Schottky contacts
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DOI：
10.1109/ispsd.2003.1225288
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发表时间：
2003-04
期刊：
影响因子：
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通讯作者：
Xu Cheng;Xing-Ming Liu;J. Sin;B. Kang
中科院分区：
文献类型：
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作者：
Xu Cheng;Xing-Ming Liu;J. Sin;B. Kang
提出了一种提高CoolMOS/SPL/体二极管反向恢复速度的新方法。在这种方法中，肖特基接触被集成到CoolMOS/spl trade/结构的每个单元中。单元分布的肖特基接触的并入导致体二极管恢复速度的显著改善。Medici/spl trade/混合模式仿真结果表明，在600 V CoolMOS/spl trade/中，体二极管的反向恢复电荷提高了58%以上。对其他器械特性没有显著影响。这种方法提供了一个很好的解决方案，以提高体二极管的恢复速度的CoolMOS/SPL贸易/没有使用复杂的载流子寿命杀死技术。
A new approach to improve the CoolMOS/spl trade/ body-diode reverse-recovery speed is proposed. In this approach, a Schottky contact is integrated into every cell of the CoolMOS/spl trade/ structure. Incorporation of the cell-distributed Schottky contacts results in a significant improvement in the body-diode recovery speed. The Medici/spl trade/ mixed-mode simulation results show an over 58% improvement in the reverse-recovery charge of the body-diode in a 600V CoolMOS/spl trade/. There is no significant sacrifice to the other device characteristics. This approach provides a good solution to improve the body-diode recovery speed of the CoolMOS/spl trade/ without using the complicated carrier-lifetime-killing techniques.