Impact-ionization and noise characteristics of thin III-V avalanche photodiodes
Impact-ionization and noise characteristics of thin III-V avalanche photodiodes
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DOI：
10.1109/16.974696
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发表时间：
2001-12-01
影响因子：
3.1
通讯作者：
Teich, MC
中科院分区：
文献类型：
--
作者：
Saleh, MA;Hayat, MM;Teich, MC
众所周知，McIntyre的局域载流子倍增理论不能解释雪崩光电二极管（APD）中观察到的利用薄倍增区的过量噪声因子的抑制。我们表明，载流子倍增模型，结合死空间的影响，早期开发的Hayat等人。提供了良好的协议与薄InP，In0.52Al0.48As，GaAs，和Al0.2Ga0.8As APD的碰撞电离和噪声特性，不同宽度的倍增区域。我们概述了一个通用的技术，便于计算的载流子的电离系数，已经走过了一段距离超过死空间（启用载体），直接从实验的过量噪声因子数据。这些系数以指数方式依赖于电场，并且与倍增宽度无关，正如物理基础上所预期的那样。用于获得电离系数的程序是结合死空间乘法理论（DSMT）来预测过量噪声因子与平均增益曲线是在良好的雅阁与薄M-V APD的实验数据，为所有的乘法区宽度。
It is, by now, well known that McIntyre's localized carrier-multiplication theory cannot explain the suppression of excess noise factor observed in avalanche photodiodes (APDs) that make use of thin multiplication regions. We demonstrate that a carrier multiplication model that incorporates the effects of dead space, as developed earlier by Hayat et al. provides excellent agreement with the impact-ionization and noise characteristics of thin InP, In0.52Al0.48As, GaAs, and Al0.2Ga0.8As APDs, with multiplication regions of different widths. We outline a general technique that facilitates the calculation of ionization coefficients for carriers that have traveled a distance exceeding the dead space (enabled carriers), directly from experimental excess-noise-factor data. These coefficients depend on the electric field in exponential fashion and are independent of multiplication width, as expected on physical grounds. The procedure for obtaining the ionization coefficients is used in conjunction with the dead-space-multiplication theory (DSMT) to predict excess noise factor versus mean-gain curves that are in excellent accord with experimental data for thin M-V APDs, for all multiplication-region widths.