Bromine Vacancy Redistribution and Metallic-Ion-Migration-Induced Air-Stable Resistive Switching Behavior in All-Inorganic Perovskite CsPbBr3 Film-Based Memory Device
Bromine Vacancy Redistribution and Metallic-Ion-Migration-Induced Air-Stable Resistive Switching Behavior in All-Inorganic Perovskite CsPbBr3 Film-Based Memory Device
复制标题
全无机钙钛矿 CsPbBr3 薄膜存储器件中溴空位重新分布和金属离子迁移引起的空气稳定电阻开关行为
DOI：
10.1002/aelm.201900754
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发表时间：
2020
影响因子：
6.2
通讯作者：
Ma Hongxiang
中科院分区：
文献类型：
--
作者：
Zhu Yuanyuan;Cheng Pengwei;Shi Jing;Wang Hongjun;Liu Yong;Xiong Rui;Ma Hongyu;Ma Hongxiang
全无机卤化物钙钛矿由于其与有机-无机混合卤化物钙钛矿相比的上级稳定性而在电阻开关（RS）存储器器件中的应用中吸引了大量关注。RS存储器件使用空气稳定的全无机卤化物钙钛矿型溴化铯铅（CsPbBr 3）薄膜作为开关层，其通过在低温下旋涂成功制备。基于CsPbBr 3薄膜的存储器件具有典型的可重复双极RS行为和优良的上级开关特性，包括高的ON/OFF比（10 × 104）、长的数据保持时间（>5 × 104 s）和环境稳定性。此外，通过控制不同的顺从电流，可以实现多级存储能力。提出了溴（Br）空位导电丝（CFs）的形成和断裂来解释基于Pt阳极的存储器件中的开关行为，并通过XPS深度分析进行了验证。此外，Br空位和Ag金属CF的共存被认为是导致基于Ag阳极的器件中的开关行为的原因。这些结果表明，全无机卤化物钙钛矿CsPbBr 3薄膜将是用于非易失性存储器件的有前途的开关材料。
All‐inorganic halide perovskites have attracted a great deal of attention for applications in resistive switching (RS) memory devices due to their superior stability compared to organic–inorganic hybrid halide perovskites. RS memory devices utilizing air‐stable all‐inorganic halide perovskite cesium lead bromide (CsPbBr3) film as the switching layer, which are successfully prepared by spin coating at low temperature, are demonstrated. Memory devices based on CsPbBr3film exhibit typical reproducible bipolar RS behavior and superior switching characteristics, including the high ON/OFF ratio (≈104), long data retention (>5 × 104s), and environmental stability. In addition, multilevel storage capability can be achieved through controlling the different compliance currents. The formation and rupture of bromine (Br) vacancy conducting filaments (CFs) is proposed to explain the switching behavior in the Pt‐anode‐based memory devices, which is verified by XPS depth‐profiling analysis. Moreover, the coexistence of Br vacancies and Ag metallic CFs is suggested to be responsible for the switching behavior in Ag‐anode based device. These results demonstrate that the all‐inorganic halide perovskite CsPbBr3film will be the promising switching material for nonvolatile memory devices.