Functional electronic inversion layers at ferroelectric domain walls
Functional electronic inversion layers at ferroelectric domain walls
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DOI：
10.1038/nmat4878
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发表时间：
2017-06-01
期刊：
影响因子：
41.2
通讯作者：
Meier, D.
中科院分区：
文献类型：
--
作者：
Mundy, J. A.;Schaab, J.;Meier, D.
由于其独特的电学性质，铁电铁电畴壁作为二维功能材料具有广阔的应用前景。特别耐人寻味的是所谓的带电墙，在这种墙中，极性不匹配导致需要电荷补偿的局部发散静电势，从而改变电子结构。这些壁可以表现出显著增强的导电性，并用作电路路径。然而，全域壁器件的发展也需要具有可控输出的壁来模拟二极管和晶体管等电子纳米元件。在这里，我们演示了电场控制的电子输运在铁电域壁。在半导体ErMnO_3的带电壁上，我们可逆地从电阻行为切换到导电行为。我们将这种转变与作为电荷传输通道的反转层的形成--并最终激活--联系起来。这些发现为铁电体中的磁区壁物理提供了新的见解，并预示了为所有磁区壁电路设计基本数字器件的可能性。
Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors. Here we demonstrate electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behaviour at charged walls in semiconducting ErMnO3. We relate the transition to the formation-and eventual activation-of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital devices for all-domain-wall circuitry.