Enhanced leakage and ferroelectric properties of Zn-doped BiFeO 3 thin films grown by sol-gel method
Enhanced leakage and ferroelectric properties of Zn-doped BiFeO 3 thin films grown by sol-gel method
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DOI：
10.1016/j.jallcom.2017.11.014
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发表时间：
2018-02
影响因子：
6.2
通讯作者：
Shiju Yang;Fengqing Zhang;Xiaobing Xie;Huajun Sun;Liping Zhang;S. Fan
中科院分区：
文献类型：
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作者：
Shiju Yang;Fengqing Zhang;Xiaobing Xie;Huajun Sun;Liping Zhang;S. Fan
采用溶胶-凝胶法在ITO/玻璃衬底上制备了BiFe_（1-x）Zn_xO_3（BFZO）（x = 0%，1%，2%，3%）薄膜。系统地研究了Zn掺杂对BFZO薄膜的晶体结构、漏电流、导电机制和铁电行为的影响。从XRD图谱来看，所有样品都与钙钛矿结构匹配良好，没有杂质相。在1000 kV/cm的电场下，x = 2%的BFZO薄膜具有较大的剩余极化（2 Pr = 129.6 μC/cm ~ 2）和较低的矫顽场（2 Ec = 904 kV/cm）。漏电流密度曲线表明，Zn掺杂可以显著降低BFO薄膜在低电场下的漏电流。此外，漏导机制也从低电场下的欧姆导电转变为高电场下的F-N隧穿效应。
BiFe1-xZnxO3(BFZO) (x = 0%, 1%, 2%, 3%) films were deposited on ITO/glass substrates by sol-gel method. We systematically investigated the influence of Zn doping on the crystal microstructure, leakage current, conduction mechanism and ferroelectric behavior of BFZO films. From the XRD patterns, all samples match well with the perovskite structure without impurity phase. Large remnant polarization (2Pr= 129.6 μC/cm2), low coercive field (2Ec= 904 kV/cm) at measured electric field value of 1000 kV/cm were obtained from the BFZO films with x = 2%. Leakage current density curves shows that Zn doping can significantly decrease the leakage current of BFO film in low electric field. In addition, the leakage conduction mechanism transforms from the Ohmic conduction under the low electric field to the F-N tunneling effect under high electric field.