Characterization of Young's modulus of silicon versus temperature using a "beam deflection" method with a four-point bending fixture
Characterization of Young's modulus of silicon versus temperature using a "beam deflection" method with a four-point bending fixture
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DOI：
10.1016/j.cap.2008.03.024
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发表时间：
2009-03-01
影响因子：
2.4
通讯作者：
Cho, Chun-Hyung
中科院分区：
文献类型：
--
作者：
Cho, Chun-Hyung
杨氏模量（E）和泊松比（nu）取决于硅表面上的方向。在这项工作中，已经通过使用柔度系数（s（11），s（12），和s（44））的硅的任何结晶方向的解析计算的E和V，和E的值通过使用“梁偏转”的方法与四点弯曲夹具实验确认。给出了（001）和（111）硅晶片在-150 ℃到+150 ℃范围内E随温度变化的实验结果。(C)2008 Elsevier B. V.保留所有权利。
Young's modulus (E) and Poisson's ratio (nu) are dependent upon the direction on the silicon surface. In this work, E and v of silicon have been calculated analytically for any crystallographic direction of silicon by using compliance coefficients (s(11), s(12), and s(44)), and the values of E are confirmed experimentally by using a "beam deflection" method with a four-point bending fixture. Experimental results for E as a function of temperature from -150 degrees C to + 150 degrees C are presented for (001) and (111) silicon wafers. (C) 2008 Elsevier B.V. All rights reserved.