Preparation of Cu2ZnSnS4 thin films by sulfurizing electroplated precursors
Preparation of Cu2ZnSnS4 thin films by sulfurizing electroplated precursors
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DOI：
10.1016/j.solmat.2008.11.045
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发表时间：
2009-06-01
影响因子：
6.9
通讯作者：
Takeuchi, Akiko
中科院分区：
文献类型：
--
作者：
Araki, Hideaki;Kubo, Yuki;Takeuchi, Akiko
采用电镀法制备了硫化前驱体Cu 2 ZnSnS 4（CZTS）薄膜。前体（Cu/Sn/Zn堆叠层）通过依次电镀沉积到Mo涂覆的玻璃基板上。使用用于Cu电镀的含有硫酸铜的水溶液、用于Sn电镀的含有硫酸锡的水溶液和用于Zn电镀的含有硫酸锌的水溶液作为电解液。通过在300、400、500和600 ℃的温度下在N-2气体气氛中用硫退火来硫化前体。在高于400 ℃的温度下硫化的薄膜中检测到归因于CZTS的X射线衍射峰。使用通过在600 ℃硫化电镀的富Sn前体制备的CZTS薄膜的光伏电池表现出262 mV的开路电压、9.85mA/cm（2）的短路电流和0.98%的效率。(C)2008 Elsevier B. V.保留所有权利。
Cu2ZnSnS4 (CZTS) thin films were prepared by sulfurizing precursors deposited by electroplating. The precursors (Cu/Sn/Zn stacked layers) were deposited by electroplating sequentially onto Mo-coated glass substrates. Aqueous solutions containing copper sulfate for Cu plating, tin sulfate for Sn plating and zinc sulfate for Zn plating were used as the electrolytes. The precursors were sulfurized by annealing with sulfur at temperatures of 300, 400, 500 and 600 degrees C in an N-2 gas atmosphere. The X-ray diffraction peaks attributable to CZTS were detected in thin films sulfurized at temperatures above 400 degrees C. A photovoltaic cell using a CZTS thin film produced by sulfurizing an electroplated Sn-rich precursor at 600 degrees C exhibited an open-circuit voltage of 262 mV, a short-circuit current of 9.85 mA/cm(2) and an efficiency of 0.98%. (C) 2008 Elsevier B.V. All rights reserved.