A High-Voltage Output Driver for Implantable Biomedical Stimulators and I/O Applications
A High-Voltage Output Driver for Implantable Biomedical Stimulators and I/O Applications
复制标题
用于植入式生物医学刺激器和 I/O 应用的高压输出驱动器
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
Maysam Ghovanloo
中科院分区：
文献类型：
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作者：
P. Swaroop;Anand Vasani;Maysam Ghovanloo
本文提出了一种用于植入式微电子刺激器的高电压输出驱动级，采用AMI 1.5 μ m标准CMOS工艺。堆叠器件拓扑用于实现能够提供高达标称电源电压三倍的输出电压的高压输出驱动器。氧化物应力和热载流子效应被最小化，因为输出级中所有器件的任何两个端子上的电压保持在所利用技术的标称电源电压以下。新颖的技术被用于电平移位和输出驱动器的互补输入的延迟均衡。空载驱动器的静态功耗可以忽略不计。输出级能够在9 V电源下以100 kHz的工作频率向1 k ²负载提供8.6 V输出。这对应于95.6%的驱动器效率。进一步的改进和实验正在进行中。
This work presents a high voltage output driver stage for implantable microelectronic stimulators implemented in AMI 1.5-¿m standard CMOS technology. Stacked device topology is used to implement a high voltage output driver capable of delivering output voltages up to three times the nominal supply voltage. Oxide stress and hot carrier effects are minimized as the voltage across any two terminals of all devices in the output stage are kept below the nominal supply voltage for the utilized technology. Novel techniques are used for level shifting and delay equalization of the complementary inputs to the output driver. The unloaded driver has negligible static power consumption. The output stage is capable of delivering 8.6 V output with a 9 V supply to a 1 k¿ load at an operating frequency of 100 kHz. This corresponds to a driver efficiency of 95.6%. Further improvements and experiments are underway.