Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology
Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology
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DOI：
10.1109/gemic.2015.7107827
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发表时间：
2015-03
期刊：
影响因子：
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通讯作者：
U. Ali;G. Fischer;A. Thiede
中科院分区：
文献类型：
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作者：
U. Ali;G. Fischer;A. Thiede
本文提出了两种D波段小功率基模压控振荡器(VCO-I和VCO-II)。振荡器核心是科尔皮茨类型，带有一个额外的共基晶体管，采用共源共栅结构，以避免单独的输出缓冲器。这些芯片采用0.13μm SiGe BiCMOS HBT工艺制造，分别提供300Ghz和500Ghz的ft和Fmax。VCO-I的调谐范围为138.6-147.7 GHz，而VCO-II的调谐范围为142.3-150.9 GHz。这两个振荡器都提供-1到-6 dBm到50Ω负载的输出功率，在-2.8V电源下消耗47 mW。在5 MHz频偏下测得的相位噪声为-77dBc/Hz。
Two low power fundamental mode voltage controlled oscillators (VCO-I and VCO-II) in the D-band frequency range are presented in this paper. The oscillator core is Colpitts type with an additional common base transistor in cascode configuration to avoid a separate output buffer. The chips are fabricated in a 0.13 μm SiGe BiCMOS HBT technology which offers ft and fmax of 300 GHz and 500 GHz, respectively. VCO-I has a tuning range from 138.6 to 147.7 GHz while that for VCO-II is from 142.3 to 150.9 GHz. Both oscillators deliver output power from -1 to -6 dBm to 50 Ω load and consume 47 mW from a -2.8 V supply. A phase noise of -77 dBc/Hz at 5 MHz offset frequency was measured.