Effect of Thickness and Annealing Temperature on Magnetic Properties of Ultrathin gamma-Fe2O3 Films Grown on Silicon Substrate
Effect of Thickness and Annealing Temperature on Magnetic Properties of Ultrathin gamma-Fe2O3 Films Grown on Silicon Substrate
复制标题
厚度和退火温度对硅衬底上生长的超薄 γ-Fe2O3 薄膜磁性能的影响
DOI：
10.1007/s11661-014-2436-5
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发表时间：
2014
影响因子：
2.8
通讯作者：
Chen Peng
中科院分区：
文献类型：
--
作者：
Sun Bai;Zhao Wenxi;Xiong Yuanqiang;Lin Yingyan;Chen Peng
研究了厚度和退火温度对在硅衬底上生长MgO缓冲层的超薄γ- fe2o3薄膜磁性能的影响。室温下样品的饱和磁化强度和矫顽力随退火温度的升高而增大，随退火温度高于873 K（600℃）而减小。在室温下，样品的饱和磁化强度随γ- fe2o3厚度的增加而减小。在873 K（600℃）下退火的3 ~ 4 nm厚的γ- fe2o3样品的饱和磁化强度约为400 emu/cm3，在误差范围内接近体积值~390 emu/cm3。
The effect of thickness and annealing temperature on magnetic properties of ultrathin γ-Fe2O3films with MgO buffer layer grown on silicon substrate is investigated. The saturation magnetization and coercive force of samples at room temperature increase with increasing of annealing temperature, and decrease as annealing temperature is above 873 K (600 °C). The saturation magnetization of samples decreases with increasing of the thickness of γ-Fe2O3at room temperature. The samples with 3 to 4 nm thick γ-Fe2O3annealed at 873 K (600 °C) show saturation magnetization of about 400 emu/cm3, which is close to the bulk value of ~390 emu/cm3within the error range.