Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications
Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications
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用于栅极电介质应用的非晶远程等离子体沉积铪铝合金中的电子捕获
DOI：
10.1116/1.1481872
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发表时间：
2002
影响因子：
1.4
通讯作者：
G. Lucovsky
中科院分区：
文献类型：
--
作者：
R. Johnson;J. G. Hong;C. Hinkle;G. Lucovsky
研究了非晶态Hf-铝酸盐合金（HfO 2）x（Al 2 O3）1−x的物理和电学性质。俄歇电子能谱和傅里叶变换红外光谱表征证实这些合金是均匀的，伪二元的字符，显示增加的热稳定性对结晶相对于各自的端元氧化物。电容-电压和电流密度-电压数据作为温度的函数表明，这些合金的Hf d状态作为本地化的电子陷阱，并在能量约等于HfO 2相对于Si的导带偏移能量。 这项工作还提供了额外的洞察到先前报道的研究Ta-铝酸盐合金与局部电子陷阱与Ta原子的d状态。
The physical and electrical properties of noncrystalline Hf-alumiunate alloys, (HfO2)x(Al2O3)1−x, were investigated. Characterization by Auger electron spectroscopy and Fourier transformation infrared spectroscopy confirm these alloys are homogeneous and pseudobinary in character, displaying increased thermal stability against crystallization with respect to the respective end-member oxides. Capacitance–voltage and current density-voltage data as a function of temperature demonstrate that the Hf d states of these alloys act as localized electron traps, and are at an energy approximately equal to the conduction band offset energy of HfO2 with respect to Si. This work also provides additional insight into a previously reported study of Ta-aluminate alloys with localized electron traps associated with d states of the Ta atoms.