OZONE-INDUCED RAPID LOW-TEMPERATURE OXIDATION OF SILICON
OZONE-INDUCED RAPID LOW-TEMPERATURE OXIDATION OF SILICON
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臭氧引发的硅快速低温氧化
DOI：
10.1063/1.110467
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发表时间：
1993
影响因子：
4
通讯作者：
I. Boyd
中科院分区：
文献类型：
--
作者：
A. Kazor;I. Boyd
我们报告了在高达550 °C的温度下使用臭氧富氧来诱导硅的快速氧化。在这些条件下诱导的生长速率远远超过一个数量级大于使用纯干氧实现的。在550 °C下生长厚度达260埃的膜4小时，产生与850 °C下的常规氧化相当的生长速率。
We report the use of ozone enriched oxygen to induce rapid oxidation of silicon at temperatures up to 550 °C. The growth rates induced under these conditions were well over an order of magnitude larger than those achieved using pure dry oxygen. At 550 °C films up to 260 A in thickness were grown 4 h producing a growth rate comparable to that for conventional oxidation at 850 °C.