Increase and Decrease of Etching Rate of Silicon due to Diamond Tip Sliding by Changing Scanning Density
Increase and Decrease of Etching Rate of Silicon due to Diamond Tip Sliding by Changing Scanning Density
复制标题
改变扫描密度导致金刚石尖端滑动导致硅蚀刻速率的增加和减少
DOI：
10.1143/jjap.41.l1116
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发表时间：
2002
影响因子：
1.5
通讯作者：
Jongduk Kim
中科院分区：
文献类型：
--
作者：
S. Miyake;Jongduk Kim
为了实现氢氧化钾（KOH）溶液对硅（100）蚀刻速率的增加和减少，对低和高扫描密度下金刚石尖端滑动加工的硅样品的性能进行了评估。以低扫描密度进行处理导致通过机械作用去除自然氧化层。因此，以低扫描密度处理区域会增加 KOH 溶液的蚀刻速率。此外，在高扫描密度处理的区域上以机械化学方式形成厚氧化层。厚的氧化层抑制KOH溶液的蚀刻并降低蚀刻速率。
To realize the increase and decrease of the etching rate of silicon (100) with potassium hydroxide (KOH) solution, properties of silicon specimens processed by diamond tip sliding at low and high scanning densities were evaluated. Processing at a low scanning density resulted in a removal of the natural oxide layer by a mechanical action. Therefore, processing an area at low scanning density increases the etching rate achieved with KOH solution. As well, thick oxide layers were mechanochemically formed on the area processed at a high scanning density. The thick oxidized layer suppresses etching by the KOH solution and decreases the etching rate.