Hot filament assisted diamond growth at low temperatures with oxygen addition
Hot filament assisted diamond growth at low temperatures with oxygen addition
复制标题
热丝通过添加氧气在低温下辅助金刚石生长
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
R. Clausing
中科院分区：
文献类型：
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作者：
Z. Tolt;C. Feigerle;L. Heatherly;R. Clausing
在CH_4和H_2原料气中加入少量氧气，可以在显着降低的灯丝和衬底温度下进行热灯丝辅助化学气相沉积（HFCVD）金刚石。前者可降至1400 °C，后者可降至450 °C。所需的氧气量远低于大多数氧气效应研究中使用的氧气量。对于每一个CH_4%，在O/C比上存在一个窄窗口，在此窗口处可以在低温下沉积金刚石。该窗口随CH_4%的增加而向更高的O/C比移动，并随灯丝温度的升高而扩大。改变衬底和灯丝温度对生长速率和膜质量的影响通常与金刚石的HFCVD的先前经验不一致。提高灯丝温度并不总是提高生长速率和薄膜质量，并且在较低的衬底温度下，薄膜中的非金刚石碳含量显著降低。发现了最佳条件，在低于1750 °C的灯丝温度和低于600 °C的衬底温度下，可以获得合理的生长速率（约0.5 µ m / h）和高薄膜质量。随着工作温度的降低，功耗可以显著降低，灯丝寿命可以无限延长。
Addition of a small amount of oxygen to the CH_4 and H_2 feed gas permits hot filament assisted chemical vapor deposition (HFCVD) of diamond at significantly lower filament and substrate temperatures. The former can be reduced to as low as 1400 °C and the latter to 450 °C. The amount of oxygen required is much lower than what has been used in most studies of the oxygen effect. For each CH_4%, there is a narrow window in the O/C ratio, where diamond can be deposited at low temperature. This window shifts to higher O/C ratios as the CH_4% increases and expands with increases in filament temperature. The effect of changing substrate and filament temperatures on growth rate and film quality are often not consistent with previous experiences with HFCVD of diamond. Increasing the filament temperature does not always improve the growth rate and film quality, and the non-diamond carbon content in the film is dramatically reduced at lower substrate temperatures. Optimum conditions were found that gave reasonable growth rates (~0.5 µ m / h) with high film quality at filament temperatures below 1750 °C and substrate temperatures below 600 °C. With these reductions in operating temperatures, power consumption can be significantly reduced and the filament lifetime extended indefinitely.