Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region
Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region
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通过 InGaN/GaN 量子阱有源区的界面工程实现低阈值电流密度的绿色激光二极管
DOI：
10.1364/oe.25.000415
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发表时间：
2017-01-09
期刊：
影响因子：
3.8
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Tian, Aiqin;Liu, Jianping;Yang, Hui
通过观察绿色InGaN/GaN量子阱（QW）的形貌演变和阴极发光（CL）特性，研究了在绿色InGaN/GaN QW界面处形成的铟偏析相关缺陷。同时，我们也提出了在GaN模板和自支撑GaN衬底上生长的绿色InGaN/GaN量子阱的方法和去除机制。通过对绿色InGaN/GaN量子阱的界面进行工程化处理，获得了阈值电流密度为1.85 kA cm（-2）的绿色半导体激光器（LD）结构。在室温下连续工作时，当电流密度为6 kA cm（-2）时，绿色LD的输出功率为58 mW。(C)2017美国光学学会
By observing the morphology evolution of green InGaN/GaN quantum well (QW) and studying the catholuminescence (CL) property, we investigate indium-segregation-related defects that are formed at green InGaN/GaN QW interfaces. Meanwhile, we also propose the approach and suggest the mechanism to remove them for green InGaN/GaN QW grown on both GaN templates and free-standing GaN substrates. By engineering the interface of green InGaN/GaN QWs, we have achieved green laser diode (LD) structure with low threshold current density of 1.85 kA cm(-2). The output power of the green LD is 58 mW at a current density of 6 kA cm(-2) under continuous-wave operation at room temperature. (C) 2017 Optical Society of America