Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product.
Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product.
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DOI：
10.1364/oe.17.012641
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发表时间：
2009-07
期刊：
影响因子：
3.8
通讯作者：
W. S. Zaoui;Hui-wen Chen;J. Bowers;Yimin Kang;M. Morse;M. Paniccia;A. Pauchard;J. Campbell
中科院分区：
文献类型：
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作者：
W. S. Zaoui;Hui-wen Chen;J. Bowers;Yimin Kang;M. Morse;M. Paniccia;A. Pauchard;J. Campbell
在这项工作中，我们报告了一个单独的吸收电荷倍增的Ge/Si雪崩光电二极管，在1310 nm波长处的增益带宽积为845 GHz。在光输入功率为-30 dBm时，相应的增益值为65，电带宽为13 GHz。利用器件物理模拟和光脉冲响应测量研究了非常规的高增益带宽积。对器件中电场分布、电子和空穴浓度以及漂移速度的分析表明，高偏压下增益带宽积的提高是由于渡越时间和雪崩建立时间限制在高电场下的减小。
In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced gain-bandwidth-product of 845 GHz at a wavelength of 1310 nm. The corresponding gain value is 65 and the electrical bandwidth is 13 GHz at an optical input power of -30 dBm. The unconventional high gain-bandwidth-product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced gain-bandwidth-product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.