Two-dimensional simulation of high-order laterally-coupled GaAs-AlGaAs DFB laser diodes
Two-dimensional simulation of high-order laterally-coupled GaAs-AlGaAs DFB laser diodes
复制标题
DOI：
10.1088/0268-1242/19/8/004
复制
发表时间：
2004-08
影响因子：
1.9
通讯作者：
Yuan Zhong;Xiaopeng Zhu;Guofeng Song;Yidong Huang;Lianghui Chen
中科院分区：
文献类型：
--
作者：
Yuan Zhong;Xiaopeng Zhu;Guofeng Song;Yidong Huang;Lianghui Chen
在没有外延再生长工艺的情况下制造的横向耦合分布反馈（LC-DFB）激光二极管具有制造工艺简单的优点。本文用半矢量有限差分法（SV-FDM）计算了准横电基模的二维光场分布。利用修正的耦合波方程研究了一阶、二阶和三阶LC-DFB LD的有效耦合系数kappa（eff）与占空比的关系。
Laterally-coupled distributed feedback (LC-DFB) laser diodes made without an epitaxial re-growth process have the advantage of a simple fabrication process. In this paper, two-dimensional optical field distribution of the fundamental quasi TE (transverse electric) mode is calculated by means of a semivectorial finite-difference method (SV-FDM). The dependence of the effective coupling coefficient (kappa(eff)) on the dutycycle of first-, second- and third-order LC-DFB LDs is investigated using modified coupled wave equations.